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| PD-96035 HFA04TB60SPBF HEXFRED Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free TM Ultrafast, Soft Recovery Diode (K) BASE + 2 VR = 600V VF = 1.8V Qrr * = 40nC Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count Benefits (N/C) 1 - 3 _ (A) - di(rec)M/dt * = 280A/s * 125C Description International Rectifier's HFA04TB60S is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 8 amps per Leg continuous current, the HFA04TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA04TB60S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. D2 Pak Absolute Maximum Ratings Parameter VR IF @ TC = 100C IFSM IFRM PD @ TC = 25C PD @ TC = 100C TJ TSTG www.irf.com Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 600 4.0 25 16 25 10 -55 to +150 Units V A W C 10/07/05 1 HFA04TB60SPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter VBR VFM IRM CT LS Cathode Anode Breakdown Voltage Max Forward Voltage Max Reverse Leakage Current Junction Capacitance Series Inductance Min. Typ. Max. Units 600 1.5 1.8 1.4 0.17 44 4.0 8.0 1.8 2.2 1.7 3.0 300 8.0 V V A pF nH Test Conditions IR = 100A IF = 4.0A See Fig. 1 IF = 8.0A IF = 4.0A, T J = 125C See Fig. 2 VR = VR Rated TJ = 125C, VR = 0.8 x VR RatedD Rated See Fig. 3 VR = 200V Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified) Parameter t rr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time See Fig. 5 & 6 Peak Recovery Current Reverse Recovery Charge See Fig. 7 Peak Rate of Fall of Recovery Current During tb See Fig. 8 Min. Typ. Max. Units 17 28 38 2.9 3.7 40 70 280 235 42 57 5.2 6.7 60 105 ns A nC A/s Test Conditions IF = 1.0A, dif/dt = 200A/s, VR = 30V TJ = 25C TJ = 125C IF = 4.0A TJ = 25C TJ = 125C V R = 200V TJ = 25C TJ = 125C dif/dt = 200A/s TJ = 25C TJ = 125C Thermal - Mechanical Characteristics Parameter Tlead RthJC RthJA Wt Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Weight Min. Typ. 2.0 0.07 Max. 300 5.0 80 Units C K/W g (oz) 0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount 2 www.irf.com HFA04TB60SPBF 100 1000 Reverse Current - IR (A) 100 10 1 0.1 0.01 0.001 0 TJ = 150C TJ = 125C Instantaneous Forward Current - IF (A) 10 TJ = 150C TJ = 125C T = 25C J T = 25C J 100 200 300 400 500 Reverse Voltage - V R (V) 1 Fig. 2 - Typical Reverse Current vs. Reverse Voltage 100 A Junction Capacitance -CT (pF) T = 25C J 10 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current, 1 1 10 100 1000 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFA04TB60SPBF 50 14 VR = 200V TJ = 125C TJ = 25C 45 I F = 8.0A I F = 4.0A 12 I F = 8.0A 10 40 I F = 4.0A trr- (nC) Irr- ( A) 8 35 6 30 4 25 VR = 200V TJ = 125C TJ = 25C 20 100 1000 2 di f /dt - (A/s) 0 100 di f /dt - (A/s) 1000 Fig. 5 - Typical Reverse Recovery vs. dif/dt 200 VR = 200V TJ = 125C TJ = 25C 160 Fig. 6 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125C TJ = 25C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /s) 120 I F = 4.0A I F = 4.0A Qrr- (nC) 80 40 0 100 di f /dt - (A/s) 1000 100 100 A di f /dt - (A/s) 1000 Fig. 7 - Typical Stored Charge vs. dif/dt 4 Fig. 8 - Typical di(rec)M/dt vs. dif/dt, www.irf.com HFA04TB60SPBF 3 IF trr ta tb 4 REVERSE RECOVERY CIRCUIT VR = 200V 0 Q rr 2 I RRM 0.5 I RRM di(rec)M/dt 5 0.01 L = 70H D.U.T. D G IRFP250 S 1 0.75 I RRM di f /dt 4. Qrr - Area under curve defined by trr and I RRM trr X IRRM Q rr = 2 5. di(rec)M/dt - Peak rate of change of current during t b portion of trr dif/dt ADJUST 1. dif/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 10 - Reverse Recovery Waveform and Definitions www.irf.com 5 HFA04TB60SPBF D2PAK Package Outline Dimensions are shown in millimeters (inches) D2PAK Part Marking Information T HIS IS A HFA04T B60S INT ERNATIONAL RECT IF IER LOGO ASS EMBLY LOT CODE (N/C) (A) 6 (K) PART NUMBER DAT E CODE YY = YEAR WW = WEEK P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) www.irf.com HFA04TB60SPBF D2PAK Tape & Reel Information Dimensions are shown in millimeters (inches) Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/05 www.irf.com 7 |
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